DETERMINING PROPERTIES OF GALLIUM ARSENIDE DETECTOR BY USING PENELOPE

Ly Anh Tu, Tran Thi Thu Van, Nguyen Truong Thanh Hai, Nguyen Linh Chi

Abstract


Gallium Arsenide (GaAs) is a III-V compound semiconductor with
some good properties suitable for a detector operating at room temperature.
Although nowadays there are many semiconductor detector as
Si(Li), Ge(Li), HPGe,GaAs detector has more advantages than other
detectors especially, it has a low cost and can operated at room temperature,
at which many other types of semiconductor detectors operate
difficultly. This paper will describe the properties of semiconductor GaAs
and fabrication method of GaAs detector. At the same time, this paper
also presents the simulation results GaAs detector signal when receiving
photons at different energy levels and the detector absorption efficiency
depends on factors such as energy, the position of the radiation source,
the thickness of the GaAs layer, contact materials. The comparison between
Si and GaAs detectors will show more clearly the advantages of
GaAs detectors.

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