DETERMINING PROPERTIES OF GALLIUM ARSENIDE DETECTOR BY USING PENELOPE

Abstract

Gallium Arsenide (GaAs) is a III-V compound semiconductor with some good properties suitable for a detector operating at room temperature. Although nowadays there are many semiconductor detector as Si(Li), Ge(Li), HPGe,GaAs detector has more advantages than other detectors especially, it has a low cost and can operated at room temperature, at which many other types of semiconductor detectors operate difficultly. This paper will describe the properties of semiconductor GaAs and fabrication method of GaAs detector. At the same time, this paper also presents the simulation results GaAs detector signal when receiving photons at different energy levels and the detector absorption efficiency depends on factors such as energy, the position of the radiation source, the thickness of the GaAs layer, contact materials. The comparison between Si and GaAs detectors will show more clearly the advantages of GaAs detectors.